Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace

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Aluminium Anneal furnace (C4)

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for annealing and oxidation of e.g. silicon wafers with aluminium or ALD oxides Al₂O₃ and TiO₂.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom B-1. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager, before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Annealing: look at the Annealing page

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose		Annealing and oxidation of e.g. Wafers with aluminium Wafers with Al₂O₃ and TiO₂ deposited by ALD
Process parameter range	Process Temperature	Normally 350-500 ^oC for wafers with aluminium, but the maximum furnace temperature is 1150 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 0-10 slm O₂: 0-10 slm
Substrates	Batch size	1-30 4" mm wafers (or 2" mm wafers) 1 6" mm wafer Small samples placed on a 6" dummy wafer
Substrates	Substrate materials allowed	Silicon wafers with aluminium. Silicon wafers with Al₂O₃ and TiO₂ deposited by ALD Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone