Specific Process Knowledge/Lithography/Baking

From LabAdviser

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Comparing baking methods

Hotplate: 90-110C SU8 hotplates 1, 2 and 3 Small benchtop hotplates Gamma hotplates Oven 90C Oven: 110C - 250C Oven 250C
Purpose

Programmable, contact bake

  • Soft bake
  • PEB

Programmable, ramped contact bake

  • Soft bake of SU-8
  • PEB of SU-8

Hotplate: 90-110C:
Programmable, contact bake

  • Soft bake
  • PEB


Labspin hotplates:
Adjustable temperature, contact bake

  • Soft bake
  • PEB
  • Hard bake

Recipe dependent temperature, contact or proximity bake

  • Soft bake
  • PEB
  • Hard bake

Manual convection bake

  • Soft bake

Manual convection bake

  • Hard bake
  • Post-exposure bake

Manual convection bake

  • Dehydration
  • NO resist!
Temperature

Maximum 120°C

Return to 90°C after use

Maximum 110°C

Hotplate: 90-110C:

  • Maximum 120°C
  • Return to 90°C after use


Labspin hotplates:

  • Maximum temperature is hotplate dependent
  • Temperature with top-plate: Actual surface temperature = 0.9 * display value

Fixed at various recipe dependent temperatures

Fixed at 90°C

110 - 250°C

Return to 110°C after use

Fixed at 250°C

Substrate size
  • 50 mm wafer
  • 100 mm wafer
  • 150 mm wafer
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafer
  • 200 mm wafer
  • pieces (only Labspin hotplates)
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafer
  • 200 mm wafer
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types except type IV

Hotplate dependent.

(All substrates and film or pattern of all types, unless otherwise noted on the hotplate)

Silicon and glass substrates

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types except resist|

Restrictions
(Not allowed)
III-V, copper, steel substrates

Pb, Te films

Hotplate dependent. Any restrictions will be noted on the hotplate.

III-V, copper, steel substrates III-V, low Tg polymer, copper, steel substrates III-V, low Tg polymer, copper, steel substrates

Resist is not allowed

QC

https://labmanager.dtu.dk/view_binary.php?type=data&mach=336

Hotplate 1:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=122

Hotplate 2:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=124

Hotplate 3:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=453

Hotplate: 90-110C:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=336

Spin coater: Labspin 02:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=362

Spin coater: Labspin 03:
https://labmanager.dtu.dk/view_binary.php?type=data&mach=387

Spincoater: Gamma ebeam & UV:
http://labmanager.dtu.dk/view_binary.php?fileId=4431

Spincoater: Gamma UV:
http://labmanager.dtu.dk/view_binary.php?fileId=4432

Developer: TMAH UV-lithography:
http://labmanager.dtu.dk/view_binary.php?fileId=4434

Spincoater: Süss stepper:
http://labmanager.dtu.dk/view_binary.php?fileId=4433

Developer: Stepper:
http://labmanager.dtu.dk/view_binary.php?fileId=4435




Hotplates

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Hotplate: 90-110C

Hotplate: 90-110C located in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C


Hotplate 1 (SU8), Hotplate 2 (SU8), Hoplate 3(SU8) and Hotplate 4(SU8)

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have four dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time. In order to avoid thermal curing of SU-8 residues on the hotplates, they are temperature limited to 110°C.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8) Hotplate 3 (SU8) Hotplate 4 (SU8)

Small benchtop hotplates

Model: Präzitherm PZ 28-2.

Contact bake only. Maximum temperature is hotplate dependent.

Most of these hotplates have been fitted with a top-plate in order to protect the original hotplate surface. With the top-plate, the set point of the controller must be adjusted in order to achieve the correct temperature during the bake:

Actual surface temperature = 0.9 * display value


Gamma hotplates

Hotplate modules in Spin Coater: Gamma UV.

Hotplate temperatures are recipe dependent.

Information about the Süss MicroTec Gamma tools can be found in labadviser:


Ovens

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Oven 90C

Oven 90C situated in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 110C - 250C

Oven: 110C - 250C situated in C-1

Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.

The set-point can be varied, but should always be returned to 110°C after use.

The user manual, and contact information can be found in LabManager: Oven: 110C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment situated in C-1

See Oven 250C