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Descum results
Descum results plasma asher 1
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
Note: Plasma asher was cold before use
| Settings
|
Etched Thickness (nm)
|
|
|
ashing time (min)
|
| Recipe |
O2 flow |
N2 flow |
Power
|
1 |
2 |
5 |
7 |
10 |
10
|
| 1 |
70 |
70 |
150 |
14,2 |
16,3 |
47,6 |
123,2 |
854,3 |
862,1
|
| 2 |
500 |
0 |
200 |
|
8,1 |
32,9 |
271,1 |
495,6 |
446,2
|
|
Conny Hjort & Jesper Hanberg
September 2019
Plasma asher 2
Descum results plasma asher 2 - recipe 1
Descum of AZ Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
Experiment parameters:
|
O2 flow |
N2 flow |
Power
|
| recipe 1 |
100 |
100 |
150
|
| recipe 2 |
500 |
0 |
200
|
|
recipe 1
| Ashing time (min) |
1 |
2 |
3 |
4 |
6 |
7 |
8 |
9 |
10 |
12 |
14 |
15 |
20
|
| Etched Thickness (nm) |
8,7 |
5,1 |
12,5 |
6,2 |
31,8 |
86,0 |
25,7 |
46,8 |
38,3 |
49,7 |
59,4 |
140,1 |
360,7
|
| Initial temperature (°C) |
28 |
21 |
31 |
21 |
22 |
28 |
25 |
24 |
21 |
24 |
24 |
22 |
22
|
|
Descum results plasma asher 2 - recipe 2
recipe 2
| Ashing time (min) |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
10 |
12 |
15 |
20
|
| Etched Thickness (nm) |
8,1 |
9,4 |
16,8 |
55,2 |
44,0 |
47,5 |
42,5 |
55,1 |
85,3 |
122,4 |
184,8 |
305,9
|
| Initial temperature (°C) |
22 |
21 |
21 |
22 |
22 |
22 |
21 |
21 |
20 |
21 |
21 |
22
|
|
We can observe linear dependance of etched material on time after etching 7 minutes and more (recipe 2).
