Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace

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Gate Oxide furnace (A2)

Gate Oxide furnace (A2). Positioned in cleanroom B-1

The Gate Oxide furnace (A2) is a Tempress horizontal furnace for growing gate oxide and for oxidation of other very clean silicon wafers.

The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.

This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Gate Oxide furnace (A2)

Process knowledge

• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Overview of the performance of the Gate Oxide furnace and some process related parameters

Purpose	Oxidation of silicon (for very clean gate oxide layers)	Oxidation: Dry
Performance	Film thickness	Dry SiO2: 50Å to ~2000Å (it takes too long to grow a thicker oxide layer)
Process parameter range	Process Temperature	800-1150 oC
	Process pressure	1 atm
	Gasses on the system	N2 O2
Substrates	Batch size	1-30 100 mm wafers (or 50 mm wafers) per run
	Substrate materials allowed	Silicon wafers (RCA cleaned) without metal bulk contamination