Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace

Feedback to this page: click here

Anneal-bond furnace (C3)

The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers.

This furnace is the third furnace tube in the furnace C-stack positioned in cleanroom B-1.

In this furnace it is allowed oxidize and anneal new wafers without doing an RCA clean first. Also silicon wafers from PECVD4 and wafers without any metal coming from PECVD3 and bonded wafers comming directly from the Wafer Bonder 02 (assuming they were clean and not have been exposed to any metal when entering wafer bonder) can be processed in the furnace without an RCA cleaning. Check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Anneal-bond Furnace (C3)

Process knowledge

Oxidation: look at the Oxidation page
Annealing: look at the Annealing page

Overview of the performance of Anneal Bond furnace and some process related parameters

Purpose	Oxidation of Si wafers Annealing of processed wafers, eg. bonded wafers from EVG NIL	Oxidation: Dry Wet: with bubbler (water steam + O₂)
Performance	Film thickness	Dry SiO₂: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide) Wet SiO₂: 50 Å to ~5 µm (it takes too long to grow a thicker oxide)
Process parameter range	Process temperature	800-1150 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 0-10 slm O₂: 0-10 slm
Substrates	Batch size	1-30 100 mm wafers (or 50 mm wafers) per run
Substrates	Substrate materials allowed	Silicon wafers (new wafers or RCA cleaned wafers) Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Wafers from the LPCVD furnaces Wafers from PECVD4 Wafers from PECVD3 (without any metal) Wafers from Wafer Bonder 02 (assuming they were clean and not have been exposed to any metal when entering the Wafer Bonder 02)