Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300
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IBE/IBSD Ionfab 300: milling, dry etching and deposition in the same tool
IBE/IBSD Ionfab 300 was manufactored by Oxford Instruments Plasma Technology. It was installed at Nanolab in 2011.
IBE: Ion Beam Etch
IBSD: Ion Beam Sputter Deposition
This Ionfab300 from Oxford Instruments is capable of of both ion sputter etching/milling and sputter deposition. The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees).
The user manual and contact information can be found in LabManager:
IBE/IBSD Ionfab 300+ in LabManager
Process information
Etch
- Compare sputter rates in different materials
- Some general process trends
- SIMS settings
- Results from the acceptance test:
- Magnetic stack containing Ta/MnIr/NiFe
- Process develop
Deposition
- Crystal Thickness Monitor Settings
- Results from the acceptance test:
Purpose |
|
. |
---|---|---|
Performance | Etch rates |
Typical 1-100 nm/min depending om material and process parameters |
Anisotropy |
| |
Uniformity |
| |
Process parameters | Gas flows |
Etch source:
Deposition source:
|
Chamber temperature |
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Platen temperature |
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Substrates | Batch size |
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Materials allowed |
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Possible masking material |
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