Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide
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Revision as of 15:35, 31 August 2015 by Pevo (talk | contribs) (→Comparison of the methods for deposition of Titanium Oxide)
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Deposition of Titanium Oxide
Titanium oxide can be deposited either by a sputter technique or by use of ALD (atomic layer deposition). At the moment the only system where we have a target for Titanium oxide is IBE/IBSD Ionfab300. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.
Comparison of the methods for deposition of Titanium Oxide
Sputter technique using IBE/IBSD Ionfab300 | Sputter System Lesker | III-V Dielectric evaporator | ALD Picosun 200 | |
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Generel description |
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Stoichiometry |
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Film Thickness |
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Deposition rate |
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Step coverage |
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Process Temperature |
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More info on TiO2 |
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Substrate size |
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Allowed materials |
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