Specific Process Knowledge/Thin film deposition/Deposition of Alumina

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Deposition of aluminium oxide

Aluminium oxide (Alumina, Al2O3 ) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System or the Cryofox PVD co-sputter/evaporation. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample

Comparison of the methods for deposition of Alumium Oxide

Sputter technique using IBE/IBSD Ionfab300 Sputter System Lesker III-V Dielectric evaporator ALD Picosun 200
Generel description
  • TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
  • Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
  • RF sputtering of TiO2 target
  • E-beam evaporation of TiO2
  • ALD (atomic layer deposition) of TiO2
Stoichiometry
  • Can probably be varied (sputter target: Ti, O2 added during deposition)
  • unknown
  • unknown
  • Temperature dependent - Anatase or amorphous TiO2
Film Thickness
  • ~10nm - ~0.5µm(>2h)
  • ~10nm - ~0.5µm(>2h)
  • ~10nm - ~200 nm
  • 0nm - 100nm
Deposition rate
  • 3.0-3.5nm/min (reactive DC sputtering)
  • 3 - 5 nm/min (RF sputtering)
  • 0.3 - 0.5nm/min
  • 1 - 2 Å/s
  • Not measured
Step coverage
  • Not Known
  • Not Known
  • Not Known
  • Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature
  • Expected to be below 100oC
  • Done at RT. There is a possibility to run at higher temperatures
  • Sample temperature can be set to 20-250 oC
  • 120oC - 150oC: Amorphous TiO2
  • 300oC - 350oC: Anatase TiO2
More info on TiO2
Substrate size
  • 1 50mm wafer
  • 1 100mm wafer
  • 1 150mm wafer
  • 1 200mm wafer
  • Smaller pieces can be mounted with capton tape
  • several small samples
  • several 50 mm wafers (Ø150mm carrier)
  • 1x 100 mm wafers
  • 1x 150 mm wafers
  • 1x 2" wafer or
  • several smaller samples
  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • Several smaller samples
Allowed materials
  • Almost any materials
  • not Pb and very poisonous materials
  • Almost any materials
  • Pb and poisonous materials only after special agreement
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)