Specific Process Knowledge/Thin film deposition/Wordentec
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Wordentec QCL 800
The Wordentec is a machine for:
- Deposition of metal through E-beam deposition
- Deposition of metal through thermal evaporation
- Deposition of materials through DC sputtering
- Cleaning of samples before deposition through Argon RF sputter clean
The Wordentec is designed to deposit on 1-6 samples in sequence, samples of a size up to 6" in diameter. Adaptors exist for deposition on 2", 4" and 6" wafers, but deposition is possible on samples of almost any size and shape, as long as they do not exceed the size of a 6" substrate. The Wordentec supports either single sample deposition on each sample or batch deposition on six wafers in sequence. It is possible to freely combine processes from the machines different sources.
The user manual, quality control procedure and results, user APV, technical information and contact information can be found in LabManager:
Process information
The metals available for E-beam evaporation and their standard deposition rates are:
| Metal | Deposition rate [Å/s] |
|---|---|
| Titanium (Ti) | 10 |
| Chromium (Cr) | 10 |
| Aluminium (Al) | 10 |
| Nickel (Ni) | 10 |
| Platinum (Pt) | 10 |
| Gold (Au) | 10 |
Thermal evaporation materials
We currently have Aluminium, Silver and Germanium available to deposit through thermal evaporation.
Sputter materials
It is possible to sputter deposit almost any material, provided that it is possible to deposit with DC sputtering. The materials available currently are:
- TiW alloy (10%/90% by weight)
- Aluminium (Al)
- Chromium (Cr)
- Silver (Ag)
- Titanium (Ti)
- Silicon (Si)
More information about deposition rates and surface roughness can be found by clicking on the different elements.
Wafer temperature
The wafer temperature during e-beam deposition of 200 nm Au on six wafers has been measured using thermal labels on the backside of the wafers. The following results were obtained:
| Wafer | Temperature [C] |
|---|---|
| 1 | 48 |
| 2 | 60 |
| 3 | 65 |
| 4 | 71 |
| 5 | 71 |
| 6 | 77 |
The temperatures are accurate within approximately +/- 3C and probably underestimating the actual wafer temperature slightly. It is observed that the wafer temperature increases with each wafer, thus if wafer temperature is of concern it is advised to reduce the number of wafers per run.
| Purpose | Deposition of metals |
|
|---|---|---|
| Performance | Film thickness |
|
| Deposition rate |
| |
| Process parameter range | Process Temperature |
|
| Process pressure |
| |
| Substrates | Batch size |
|
| Substrate material allowed |
| |
| Material allowed on the substrate |
|
* For thicknesses above 200 nm permission is required.
Quality control (QC) for Wordentec
| Quality control (QC) for Wordentec | ||||||||||||||||||||
Thicknesses are measured in 5 points with one of the Dektak instruments. |