Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv
Date | Substrate Information | Process Information | SEM Images | ||||||
---|---|---|---|---|---|---|---|---|---|
Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
4/9-2014 | 1/4 6" ELK stitching CB on oxide carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % on die | Pegasus/jmli | 5 minute TDESC clean + 30 sec barc etch | jml/polySi/lshbaseline-A: 50 cycles or 6:15 minutes | S004301 |
File:Peg-S004301-03.jpg File:Peg-S004301-04.jpg File:Peg-S004301-05.jpg File:Peg-S004301-06.jpg File:Peg-S004301-01.jpg File:Peg-S004301-02.jpg |