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At the moment DANCHIP has 2(3) PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 has been decommissioned and PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD2 is for clean wafers both for silicon based materials and for III-V materials. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD2 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.

Recipes on PECVD2 for deposition of silicon oxides

Quality control recipe

Quality Controle (QC) for PECVD2

QC Recipe:	QCTOXIDE
SiH₄ flow	12 sccm
N₂O flow	710 sccm
N₂ flow	392 sccm
Pressure	550 mTorr
RF-power	100 W @380kHz
Deposition time	1 min

QC limits	PECVD2
Depostion rate of Silicon Oxide	69nm/min - 119nm/min
Non-uniformity of the deposition rate (std. deviation of 9 points)	0 - 2.8 nm
Refractive index of the Silicon Oxide	1.41 - 1.53
Non-uniformity of the refrative index (std. deviation of 9 points)	0 - 0.07

SiO2 Standard, High Rate

SiO2 Standard
N $_{2}$ O-flow	1600 sccm
SiH $_{4}$ -flow	17 sccm
RF-power (380 kHz)	380 W
Process Pressure	400 mTorr
Deposition rate	179 nm/min
index of refraction	1.461

SiO2 Standard, Low Rate

1STOxide		A test recipe
N $_{2}$ -flow	392 sccm	392 sccm
N $_{2}$ O-flow	1420 sccm (setting in software is 710 sccm)	1420 sccm (setting in software is 710 sccm)
SiH $_{4}$ -flow	12 sccm	12 sccm
RF-power	100 W	150 W
Process Pressure	550 mTorr	700 mTorr
Deposition rate	~100 nm/min	109 ± 2 nm/min [tested: 2014-03-18]
index of refraction	1.47	1.465 [tested: 2014-03-18]
Uniformity	<1 %	3.2% over the wafer [tested: 2014-03-18]

Deposition rate as a function of deposition time using 1STOxide:

Deposition time [s]	Oxide thickness [nm]	Expected naturally grown oxide [nm]	Deposition rate [nm/min]
15	26.9	2	99.6
30	51.9	2	99.8
60	102.4	2	100.4
60	102.7	2	100.7
120	201.1	2	99.6

Thickness uniformity of test wafer using the test recipe

Thickness uniformity of test wafer using the test recipe.

BPSG: RI vs. B/P

B2H6 flow and PH3 flow was varied to map the RI of different B2H6/PH3 ratios.
Work done by BGHE@danchip in fall 2013

Recipe name	SiH4 flow [sccm]	N₂O flow [sccm]	N2 flow [sccm]	B2H6 flow [sccm]	PH3 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1PBSG	17	1600	0	See below	See below	500	800LF	BPSG glass for waveguide cladding layer

LF=Low Frequency

Run number	PH3 flow	B2H6 flow	B2H6/PH3	RI	Thickness
A1	40 sccm	135 sccm	3.38	1.4582	3.28 µm
A2	55 sccm	115 sccm	2.09	1.4615	3.13 µm
A3	45 sccm	130 sccm	2.89	1.4590	3.13 µm
A4	35 sccm	140 sccm	4.0	1.4572	3.22 µm
A5	50 sccm	120 sccm	2.4	1.4602	3.14 µm

Recipes on PECVD3 for deposition of silicon oxides

Quality Controle (QC) for PECVD3 - oxide

QC Recipe:	QCOXYD
SiH₄ flow	12 sccm
N₂O flow	1420 sccm
N₂ flow	392 sccm
Pressure	550 mTorr
RF-power	60 W

QC limits	PECVD3 - OXIDE
Deposition rate	66 - 89 nm/min
Non-uniformity	<1.9%
Refractive index	1.472 - 1.487

Recipes

Recipe name	SiH4 flow [sccm]	N₂O flow [sccm]	N2 flow [sccm]	B2H6 flow [sccm]	PH3 flow [sccm]	Pressure [mTorr]	Power [W]	Description
LFSiO	12	1420	392	0	0	550	60	Uniform silicon oxide
1PBSG	17	1600	0	135	40	500	800LF	BPSG glass for waveguide cladding layer

LF=Low Frequency

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]
LFSiO	~75	~1.48	<1
1PBSG	~228 nm/min	.	~17%

Recipes on PECVD3 for deposition of doped oxide

Recipes

Recipe name	SiH₄ flow [sccm]	N₂O flow [sccm]	N₂ flow [sccm]	GeH₄ flow [sccm] (scaled by 100)	B₂H₆ flow [sccm]	PH₃ flow [sccm]	Pressure [mTorr]	Power [W]	Description
Core-Ge	17	1600	300	300	0	0	400	600 LF	Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics Annnealing: Anneal bond furnace, recipe "core1100"
Top-BPSG	17	1600	0	0	100	40	500	800 LF	Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics Annnealing/oxidation: Anneal bond furnace, recipe "clad1000"

Expected results

Recipe name	Deposition rate [nm/min]	Refractive index
Core-Ge	~188 nm/min	~1.46969
Top-BPSG	~248 nm/min	~1.458

Recipes on PECVD1 for deposition of silicon oxides Expired!

Recipes

Recipe name	SiH4 flow [sccm]	N₂O flow [sccm]	N2 flow [sccm]	B2H6 flow [sccm]	PH3 flow [sccm]	GeH4*100 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1oxide/1ox_std/standard	17	1600	0	0	0	0	400	380LF	Process control recipe. Developed for waveguides
1PBSG	17	1600	0	135	40	0	500	800LF	Developed for waveguide top cladding by Haiyan Ou @DTU Photonics'.
BGE_PBSG	17	1600	0	240	60	0	500	800LF	Low stress PBSG
HO_core	17	1600	300	0	0	400	400	600LF	Developed by Haiyan Ou @fotonik@dtu
HO_top	17	1600	0	107	40	0	500	800LF	Developed by Haiyan Ou @fotonik@dtu

Expected results

Recipe name	Deposition rate [µm/min]	RI	Uniformity [%]	Comments
1oxide/1ox_std/standard	~0.193	1.46	2	The latest measured values can be seen in the process control sheet in LabManager
1PBSG	~0.3	1.458@633nm