Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS

LPCVD (Low Pressure Chemical Vapor Deposition) TEOS

At the moment there is one furnace for TEOS oxide depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are dinitrogenoxide and silane. The LPCVD TEOS has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD TEOS processes: One for depositing ? and one for deposition of ?. To get information on how to operate the furnace please read the manual which is uploaded to LabManager.

Process Knowledge

Please take a look at the process side for deposition of ?: Deposition of Silicon Nitride using LPCVD

A rough overview of the performance of LPCVD Silicon Nitride and some process related parameters

Purpose	Deposition of TEOS silicon oxide	.
Performance	Film thickness	Si₃N₄:~50Å - ~3000Å SRN: ~50Å - ~10000Å
.	Step coverage	Good
.	Film quality	Dense film Few defects
Process parameter range	Process Temperature	800-835 ^oC
.	Process pressure	80-230 mTorr
.	Gas flows	SiH $_{2}$ Cl $_{2}$ :10-100 sccm NH $_{3}$ :10-75 sccm
Substrates	Batch size	1-25 4" wafer per run Deposition on both sides of the substrate
.	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Quartz wafers (RCA cleaned)