Specific Process Knowledge/Lithography/LiftOff

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Comparing HMDS priming

Equipment		Lift-off Wet Bench	Lift-off (4", 6")
Purpose		AZ 5214E lift-off	AZ 5214E lift-off AZ nLOF lift-off
Bath chemical		Acetone	NMP (Remover 1165)
Performance	Contact angle	standard recipe 82° (on SiO2)	60° - 90°; standard recipe 82° (on SiO2)
Process parameters	Process temperature	Room temperature	Heating of the bath is possible. The heating has been limited to 37°C
	Ultrasonic agitation	Yes	Yes
Substrates	Substrate size	100 mm wafers	100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials	All cleanroom materials
	Batch	1 - 25	1 - 8

Lift-off Wet Bench

Acetone lift-off: positioned in cleanroom 3

This bench is only for wafers with metal!

Here are the main rules for lift-off bench use:

• Place the wafers in a dedicated wafer holder.
• Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
• Rinse your wafers for 4-5 min. in running water after stripping.

Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process

Lift-off (4", 6")

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