Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace

From LabAdviser

Feedback to this page: click here

Phosphorus Predep furnace (A4)

A4 Phosphor Pre-dep furnace. Positioned in cleanroom 2

The Phosphorus Predep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl3.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Phosphorus Predep furnace (A4)

Process knowledge

Overview of the performance of the Phosphor pre-dep furnace and some process related parameters

Purpose Doping of Phosphor
Performance
  • Look at Process knowladge
Process parameter range Process Temperature
  • 900-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • POCl3, N2
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (RCA cleaned)
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace&oldid=12267"