File:Image.JPGC2 Furnace Anneal Oxide: positioned in cleanroom 2
C1 Furnace Anneal Oxide is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.
This furnace is the second furnace tube in the furnace C-stack positioned in cleanroom 2. The furnaces are the cleanest process chambers in the cleanroom. In this furnace it is allowed to enter wafers that comes directly from PECVD1 (assuming they were very clean when entering PECVD1). Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
Overview of the performance of Anneal Oxide furnace and some process related parameters
Purpose
Oxidation and annealing
Oxidation:
Dry
Wet: with bubbler (water steam + NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
)
Performance
Film thickness
Dry SiO2: 50Å to ~2000Å (takes too long to make it thicker)
Wet SiO2: 50Å to ~5µm ((takes too long to make it thicker)
Process parameter range
Process Temperature
800-1150 oC
Process pressure
1 atm
Gas flows
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:? sccm
Substrates
Batch size
1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
Silicon wafers (new from the box or RCA cleaned)
with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
Quartz wafers (RCA cleaned)
From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)
