Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14

From LabAdviser

The nano1.4 recipe

Recipe nano1.4
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 50 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2000
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 77 nm



Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rates nm/min 168 182 185 189 191 183 9
Sidewall angle degs 91 91 91 91 90 91 0
CD loss nm/edge 7 -3 -3 -25 -26 -10 15
CD loss foot nm/edge 12 9 10 -11 1 4 9
Bowing 9 6 4 5 7 6 2
Bottom curvature -47 -34 -34 -26 -19 -32 10
zep nm/min 67