Specific Process Knowledge/Thermal Process/RTP Jipelec 2

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RTP Jipelec 2 - Rapid Thermal Processer/Annealer

RTP Jipelec 2: Positioned in cleanroom A-5

May 2023: The RTP Jipelec 2 is being tested. Please contact thinfilm@nanolab.dtu.dk for more information

Jipelec JetFIRST 200 RTP (Rapid Thermal Processer/Annealer).

The main purpose of the machine is to anneal different samples very rapidly. Furthermore, the machine can be used for alloying of different materials.

The annealing is done in a process chamber on the machine, in which the samples are heated very rapidly by use of infra red lamps placed in the top of the chamber, directly above the sample(s). The chamber walls are cooled and remains cold during the annealing.

Samples can be wafers (2", 4", 6" and 8") or smaller samples made of different materials. In the process chamber, the samples are normally placed on a 6" graphite sucseptor, but they can also be placed on a Si dummy wafer or directly in the chamber (only wafers).

The maximum annealing temperature is 1200 C. For temperatures above 700 C the annealing time is limited as can be seen in the table below.

The temperature is measured by either a thermocouple or an optical pyrometer . The temperature is regulated by a PID controller, thus the PID values will have to be optimized for each process and for each each susceptor or wafer size and thickness, annealing temperature, temperature ramping, pressure and gas flow settings etc. The responsible persons will help with the optimization of the PID parameters.

Annealings can be done at atmospheric pressure or in vacuum. It is also possible to apply a flow of either nitrogen or argon during the annealing, and forming gas (4 % H₂/96 % N₂) will be connected later.

The user manual, user APV, technical information and contact information can be found in LabManager:

RTP Jipelec 2

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		Rapid thermal processor/annealer
Process parameter range	Process temperature	Annealing temperature: Up to 1200 oC, but maximum 450 oC for III-V materials Time limits at temperatures above 700 oC: 700 °C: 60 min. 800 °C: 30 min. 900 °C: 20 min. 1000 °C: 10 min. 1100 °C: 5 min. 1200 °C: 1 min. Temperature ramp: Up to 30 oC/min with susceptor Up to 100 oC/min without susceptor
	Process pressure	1 atm (atmospheric pressure) ~ 0 mbar (vacuum) without any gas flow
	Gases on the system	Process gases: Nitrogen (N2) Argon (Ar) Forming gas (4 % H2/96 % N2) - Not connected yet Purge gas: Nitrogen (N2)
Substrates	Batch size	One 200 mm wafer (less good temperature uniformity than smaller wafers/samples) One 150 mm wafer One 100 mm wafer One or more 50 mm wafers (always placed on a susceptor or carrier wafer) One or more small samples (always placed on a susceptor or carrier wafer)
	Substrate materials allowed	Silicon Silicon oxide and silicon nitride Fused silica/quartz III-V materials - Use a dedicated carrier wafer Metals - Use a dedicated carrier wafer and ask for permission