Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide

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Deposition of Titanium Oxide

Titanium oxide can be deposited either by a sputter technique or by use of ALD (atomic layer deposition). In sputter deposition of titanium oxide, the target is Ti and oxygen is added to the chamber during the process resulting in Titanium oxide on the sample. Therefore some process development may be necessary to achieve the correct stoichiometry.

Comparison of the methods for deposition of Titanium Oxide

Sputter technique using IBE/IBSD Ionfab300 Sputter-system Metal-Oxide(PC1) Sputter-System(Lesker) ALD Picosun 200
Generel description
  • TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
  • Reactive DC sputtering of Ti target
  • Reactive or non-reactive RF sputtering of TiO2 target
  • Reactive pulsed DC sputtering
  • Reactive HIPIMS (high-power impulse magnetron sputtering)
  • Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma
  • RF sputtering of TiO2 target
  • ALD (atomic layer deposition) of TiO2
Stoichiometry
  • Can probably be varied (sputter target: Ti, O2 added during deposition)
  • Can probably be varied
  • Can probably be varied
  • Temperature dependent - Anatase or amorphous TiO2
Film Thickness
  • ~10 nm - ~0.5 µm (>2h)
  • ~10 nm - ~0.5 µm
  • ~10 nm - ~0.5 µm (>2h)
  • 0 nm - 100 nm
Deposition rate
  • 3.0-3.5 nm/min (reactive sputtering)
  • not yet known, probably faster than Sputter-System(Lesker)
  • 3-5 nm/min (RF sputtering)
  • 0.3 - 0.5 nm/min
  • 0.06 nm/min - 0.40 nm/min (very recipe and temperature dependent)
Step coverage
  • Not Known
  • Not Known
  • Not Known
  • Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature
  • Expected to be below 100 °C
  • RT to 600 °C
  • RT to 400 °C
  • 120 °C - 150 °C: Amorphous TiO2
  • 300 °C - 350 °C: Anatase TiO2
More info on TiO2

ALD1:

ALD2:

Substrate size
  • 1 50mm wafer
  • 1 100mm wafer
  • 1 150mm wafer
  • 1 200mm wafer
  • Smaller pieces can be mounted with capton tape
  • many small samples
  • Up to 10x 100 mm or 150 mm wafers
  • several small samples
  • several 50 mm wafers (Ø150mm carrier)
  • 1x 100 mm wafers
  • 1x 150 mm wafers

ALD1:

  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • 1 200 mm wafer
  • Several smaller samples

ALD2:

  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 200 mm wafer
  • Several smaller samples
Allowed materials
  • Almost any materials
  • not Pb and very poisonous materials
  • Almost any materials
  • Pb and poisonous materials only after special agreement
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals - Use a dedicated carrier wafer
  • III-V materials - Use dedicated carrier wafer
  • Polymers - Depending on the melting point/deposition temperature, use dedicated carrier wafer. Ask for permission
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