Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL

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JEOL 9500: My First E-Beam Lithography Process

This page is a step by step guide to help new users through their first exposure on the JEOL 9500 system, (insert link to same page for Raith eLine Plus). In this guide we will set up an exposure job as an example. We will set it up as a dose test and hence keep it at a fairly low complexity level. The JEOL 9500 system has a fairly steep learning curve and we encourage all users to keep the complexity level of their first exposure similar to the job in this guide.

The job set up in this guide will go through the following steps

• Spin coating of e-beam resist
• Job file preparation
• Pattern preparation including Proximity Effect Correction
• Exposure
• Development

Spin coating of resist

DTU Nanolab provides the following standard EBL resists.

Resist	Polarity	Comments	Technical reports	Spin Coater	Thinner	Developer	Rinse	Remover	Process flows (in docx-format)
CSAR	Positive	Standard positive resist, very similar to ZEP520.	Allresist_CSAR62_English.pdf‎,, CSAR_62_Abstract_Allresist.pdf‎	See table here	Anisole	AR-600-546, AR-600-548, N50, MIBK:IPA	IPA	AR-600-71, 1165 Remover	Process Flow CSAR.docx‎ Process Flow CSAR with ESPACER Process Flow CSAR with Al Process Flow LOR5A with CSAR
Copolymer AR-P 617	Positive	Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact Lithography for information.	AR_P617.pdf‎	See table here	PGME	AR 600-55, MIBK:IPA		acetone/1165	Trilayer stack: Process_Flow_Trilayer_Ebeam_Resist.docx‎
AR-N 8200	Negative	AllResist	Both e-beam and DUV sensitive resist. Currently being tested, contact Thomas Pedersen for information.				AR 300-47	H2O
AR-N 7520	Negative	Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact Peixiong Shi for information.	AR-N7500-7520.pdf‎	See table here	PGMEA	AR 300-47, TMAH	H2O