|
Wet Silicon Oxide etch (BHF/HF)
|
ASE
|
III-V RIE
|
AOE (Advanced Oxide Etch)
|
DRIE Pegasus 4
|
ICP metal
|
IBE/IBSD Ionfab 300
|
HF Vapour Phase Etch
|
Generel description
|
|
- Anisotropic etch: vertical sidewalls
|
- Anisotropic etch: vertical sidewalls
- Premarily for III-V samples
|
- Anisotropic etch: vertical sidewalls
|
- Anisotropic etch: almost vertical sidewalls
|
- Anisotropic etch: almost vertical sidewalls
- We prefer that SiO2 etch on 6" wafers takes place in the Pegasus 4.
|
- Primarily for pure physical etch by sputtering with Ar-ions
|
- Gas phase HF etching with ethanol as carrier
|
Possible masking materials
|
- Photoresist
- PolySilicon
- Silicon nitride (LPCVD)
- Blue film
- Cr/Au for deeper etches (plastic beaker)
|
- Photoresist
- DUV resist
- E-beam resist
- Silicon
- Silicon Nitride
- Metals if they cover less than 5% of the wafer area
|
- Photoresist
- DUV resist
- E-beam resist
- Aluminum
- Silicon
- Silicon Nitride
|
- Photoresist
- DUV resist
- E-beam resist
- Silicon
- Silicon Nitride
- Aluminium
- Chromium (Please try to avoid this)
|
- Photoresist
- DUV resist
- E-beam resist
- Si
- Silicon Nitride
- Chromium (ask for permission)
|
- Photoresist
- DUV resist
- E-beam resist
- Si
- Silicon Nitride
- Aluminium
- Chromium
- Ti
|
- Any material that is accepted in the machine
|
- Aluminium
- Aluminium oxide
- Polysilicon
|
Etch rate range
|
- ~75 nm/min (Thermal oxide) in BHF
- ~80 nm/min (Thermal oxide) in BOE 7:1 Etchant VLSI with Surfactant
- ~25 nm/min (Thermal oxide) in 5%HF
- ~3-4µm/min in 40%HF
|
- Process dependent
- Tested range: ~20nm/min - ~250nm/min
|
- Process dependent
- Tested range: ~1nm/min - ~30nm/min
|
- Process dependent
- Tested range: ~60nm/min - ~550nm/min
|
<500nm/min
|
- Process dependent
- Tested range: ~40nm/min - ~200nm/min
|
- Process dependent
- Tested once ~22nm/min
|
- Sample and load dependent
- Expected range: 12 - 175 nm/min
|
Substrate size
|
- #1-25 100mm wafers in our 100mm bath
- What can be fitted in a plastic beaker
|
- As many small samples as can be fitted on the 100mm carrier (bad/no cooling!).
- #1 100mm wafer (or smaller with carrier)
- #1 150mm wafer (only when set up for 150mm)
|
|
- As many small samples as can be fitted on a 100mm wafer
- #1 50 mm wafer fitted on a 100mm wafer
- #1 100 mm wafer
- #1 150 mm wafers (only when the system is set up to 150mm)
|
- As many small samples as can be bonded on a 150mm wafer
- #1 50 mm wafer bonded on a 150mm wafer
- #1 100 mm wafer bonded on a 150nm wafer
- #1 150 mm wafers
|
- As many small samples as can be fitted on a 150mm wafer
- #1 50 mm wafer fittesd on a 150mm wafer
- #1 100 mm wafer fitted on a 150nm wafer
- #1 150 mm wafers
|
- As many samples as can be securely fitted on a up to 200mm wafer
- #1 50 mm wafer with special carrier
- #1 100 mm wafer with special carrier
- #1 150 mm wafers with special carrier
- #1 200 mm wafer
|
- Pieces
- #1 50 mm wafer
- #1 100 mm wafer
- #1 150 mm wafer
|
Allowed materials
|
In the dedicated bath:
- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
- Blue film
In a plastic beaker:
- No limits cross contamination wise
|
|
|
|
|
|
|
|