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Wet Silicon Oxide etch (BHF/HF)
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ASE
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III-V RIE
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AOE (Advanced Oxide Etch)
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DRIE Pegasus 4
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ICP metal
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IBE/IBSD Ionfab 300
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HF Vapour Phase Etch
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Generel description
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- Anisotropic etch: vertical sidewalls
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- Anisotropic etch: vertical sidewalls
- Premarily for III-V samples
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- Anisotropic etch: vertical sidewalls
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- Anisotropic etch: almost vertical sidewalls
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- Anisotropic etch: almost vertical sidewalls
- We prefer that SiO2 etch on 6" wafers takes place in the Pegasus 4.
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- Primarily for pure physical etch by sputtering with Ar-ions
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- Gas phase HF etching with ethanol as carrier
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Possible masking materials
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- Photoresist
- PolySilicon
- Silicon nitride (LPCVD)
- Blue film
- Cr/Au for deeper etches (plastic beaker)
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- Photoresist
- DUV resist
- E-beam resist
- Silicon
- Silicon Nitride
- Metals if they cover less than 5% of the wafer area
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- Photoresist
- DUV resist
- E-beam resist
- Aluminum
- Silicon
- Silicon Nitride
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- Photoresist
- DUV resist
- E-beam resist
- Silicon
- Silicon Nitride
- Aluminium
- Chromium (Please try to avoid this)
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- Photoresist
- DUV resist
- E-beam resist
- Si
- Silicon Nitride
- Chromium (ask for permission)
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- Photoresist
- DUV resist
- E-beam resist
- Si
- Silicon Nitride
- Aluminium
- Chromium
- Ti
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- Any material that is accepted in the machine
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- Aluminium
- Aluminium oxide
- Polysilicon
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Etch rate range
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- ~75 nm/min (Thermal oxide) in BHF
- ~90 nm/min (Thermal oxide) in SIO Etch
- ~25 nm/min (Thermal oxide) in 5%HF
- ~3-4µm/min in 40%HF
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- Process dependent
- Tested range: ~20nm/min - ~250nm/min
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- Process dependent
- Tested range: ~1nm/min - ~30nm/min
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- Process dependent
- Tested range: ~60nm/min - ~550nm/min
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<500nm/min
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- Process dependent
- Tested range: ~40nm/min - ~200nm/min
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- Process dependent
- Tested once ~22nm/min
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- Sample and load dependent
- Expected range: 12 - 175 nm/min
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Substrate size
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- #1-25 100mm wafers in our 100mm bath
- What can be fitted in a plastic beaker
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- As many small samples as can be fitted on the 100mm carrier (bad/no cooling!).
- #1 100mm wafer (or smaller with carrier)
- #1 150mm wafer (only when set up for 150mm)
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- As many small samples as can be fitted on a 100mm wafer
- #1 50 mm wafer fitted on a 100mm wafer
- #1 100 mm wafer
- #1 150 mm wafers (only when the system is set up to 150mm)
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- As many small samples as can be bonded on a 150mm wafer
- #1 50 mm wafer bonded on a 150mm wafer
- #1 100 mm wafer bonded on a 150nm wafer
- #1 150 mm wafers
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- As many small samples as can be fitted on a 150mm wafer
- #1 50 mm wafer fittesd on a 150mm wafer
- #1 100 mm wafer fitted on a 150nm wafer
- #1 150 mm wafers
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- As many samples as can be securely fitted on a up to 200mm wafer
- #1 50 mm wafer with special carrier
- #1 100 mm wafer with special carrier
- #1 150 mm wafers with special carrier
- #1 200 mm wafer
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- Pieces
- #1 50 mm wafer
- #1 100 mm wafer
- #1 150 mm wafer
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Allowed materials
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In the dedicated bath:
- Silicon
- Silicon Oxide
- Silicon Nitride
- Silicon Oxynitride
- Photoresist
- Blue film
In a plastic beaker:
- No limits cross contamination wise
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