Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2
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This system is a research tool and not available to the users
If you want to get access to the tool, then talk to professor Henry Jansen
Current setup and rules on Pegasus 2
Click here to access older configurations.
The current configuration is
| Item | The currently applied modification | Comments |
|---|---|---|
| Available gasses and gas chemistry | Available gasses:
Not available:
|
OnlySF6 and O2 are used for Si, PR, and Cr etch. The rest is only make-up |
| Plasma source heaters | Applies to
|
The temperature on the heaters in the plasma source are set to 20 degrees with a high tolerance. This essentially corresponds to powered off compared to default Pegasus temperatures which are in the 120-140 degrees range.
Always make sure that the temperature settings in the recipes are not enabled as shown below this table. |
| RF power and pressure settings | All recipes run without coil power, very low platen power and low pressures | None of the recipes use coil power in order to prevent aluminium fluoride formation at the aluminium oxide dome. These particles may drop on the wafer or chuck and cause abnormalitites.
Most of the recipes rely on very low pressure and low power - 0.2 mTorr and 10 Watt platen power is not an error and easily supports the plasma. |
| Carbon free plasmas | The process chamber does not have any carbon containing etch gasses. Therefore, polymer build-up on the chamber walls is not an issue. The 'carbon free' policy does not, however, apply to the choice of masking materials and CSAR, AZ and DUV resists are allowed. | |
| Chamber conditioning and cleaning | Running long oxygen cleans is not necessary and must be avoided. | The absence of carbon containing etch gasses ensures that the process chamber is kept clean. |
Access to Pegasus 2 configuration templates
Pegasus 2 configuration table version 1
- Table header: Template:Peg2configheader1
- Table content: Template:Peg2configcontent1