Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142

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The nano1.42 recipe

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

Recipe nano1.42
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 40 W PP
Temperature -20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 2017
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 82 nm



Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rates nm/min 148 158 164 167 166 160 8
Sidewall angle degs 90 90 90 90 90 90 0
CD loss nm/edge 7 -7 -7 -28 -28 -13 15
CD loss foot nm/edge 12 5 6 -15 -1 1 10
Bowing -1 1 -2 -5 -7 -3 3
Bottom curvature -46 -30 -29 -31 -27 -32 8
zep nm/min 65