Specific Process Knowledge/Thin film deposition/Deposition of Alumina

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Deposition of aluminium oxide

Aluminium oxide (Alumina) can be deposited by use of ALD (atomic layer deposition) or by a sputter technique in the Lesker Sputter System. During the sputter deposition oxygen is added to the chamber resulting in aluminium oxide on the sample

Comparison of the methods for deposition of Titanium Oxide

Sputter technique using IBE/IBSD Ionfab300 Sputter System Lesker III-V Dielectric evaporator ALD Picosun 200
Generel description
  • TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.
  • Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma.
  • RF sputtering of TiO2 target
  • E-beam evaporation of TiO2
  • ALD (atomic layer deposition) of TiO2
Stoichiometry
  • Can probably be varied (sputter target: Ti, O2 added during deposition)
  • unknown
  • unknown
  • Temperature dependent - Anatase or amorphous TiO2
Film Thickness
  • ~10nm - ~0.5µm(>2h)
  • ~10nm - ~0.5µm(>2h)
  • ~10nm - ~200 nm
  • 0nm - 100nm
Deposition rate
  • 3.0-3.5nm/min (reactive DC sputtering)
  • 3 - 5 nm/min (RF sputtering)
  • 0.3 - 0.5nm/min
  • 1 - 2 Å/s
  • Not measured
Step coverage
  • Not Known
  • Not Known
  • Not Known
  • Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
Process Temperature
  • Expected to be below 100oC
  • Done at RT. There is a possibility to run at higher temperatures
  • Sample temperature can be set to 20-250 oC
  • 120oC - 150oC: Amorphous TiO2
  • 300oC - 350oC: Anatase TiO2
More info on TiO2
Substrate size
  • 1 50mm wafer
  • 1 100mm wafer
  • 1 150mm wafer
  • 1 200mm wafer
  • Smaller pieces can be mounted with capton tape
  • several small samples
  • several 50 mm wafers (Ø150mm carrier)
  • 1x 100 mm wafers
  • 1x 150 mm wafers
  • 1x 2" wafer or
  • several smaller samples
  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • Several smaller samples
Allowed materials
  • Almost any materials
  • not Pb and very poisonous materials
  • Almost any materials
  • Pb and poisonous materials only after special agreement
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)