Specific Process Knowledge/Lithography/LiftOff

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Comparing HMDS priming

Equipment		HMDS oven	Spin Track 1 + 2
Purpose		HMDS priming	HMDS priming only HMDS priming and spin coating
Priming chemical		hexamethyldisilizane (HMDS)
Performance	Contact angle	standard recipe 82° (on SiO2)	60° - 90°; standard recipe 82° (on SiO2)
Process parameters	Process temperature	150°C	50°C
	Process time	32.5 minutes	3 min / wafer
Substrates	Substrate size	50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafers
	Allowed materials	All cleanroom materials	Silicon (with oxide, nitride, or metal films or patterning) Glass (borosilicate and quartz)
	Batch	1 - 25, multiple batches possible	1 - 25

Lift-off Wet Bench

Acetone lift-off: positioned in cleanroom 3

This bench is only for wafers with metal!

Here are the main rules for lift-off bench use:

• Place the wafers in a dedicated wafer holder.
• Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
• Rinse your wafers for 4-5 min. in running water after stripping.

Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process

Lift-off (4", 6")

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