Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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# The larger an area of silicon is exposed to plasma and hence etched, the higher rate of released energy. | # The larger an area of silicon is exposed to plasma and hence etched, the higher rate of released energy. | ||
Given its high etch rate, Process A is very sensible to high etch load processes and substrates with reduced cooling efficiency. Therefore, users are generally advised to | Given its high etch rate, Process A is very sensible to high etch load processes and substrates with reduced cooling efficiency. Therefore, users are generally advised to | ||
# | # Use Process A with precaution at high etch loads - above some 50%. | ||
# Avoid using Process A on bonded wafers, in particular if the etch load is more than 5-10%. The bonding reduces the cooling capacity across the wafer interface so the top wafer will immediately heat up and cause the mask to erode and the bonding polymer to melt. | |||
== Process A performance == | == Process A performance == | ||