Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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Process A is optimized for speed and depending on feature size and etch load it will achieve etch rates up to 25-30 µm/min. | Process A is optimized for speed and depending on feature size and etch load it will achieve etch rates up to 25-30 µm/min. | ||
This aggressive etch has a few drawbacks - one of which is the release of energy in the etch process. | This aggressive etch has a few drawbacks - one of which is the release of energy in the etch process. In general, it is clear that | ||
# The higher the etch rate, the higher rate of released energy. | # The higher the etch rate, the higher rate of released energy. | ||
# The larger an area of silicon, the higher rate of released energy. | # The larger an area of silicon is exposed to plasma and hence etched, the higher rate of released energy. | ||
Given its high etch rate, Process A is very sensible to high etch load processes and substrates with reduced cooling efficiency. Therefore, users are generally advised to avoid | |||
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== Process A performance == | == Process A performance == | ||