Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

@@ Line 45: / Line 45: @@
 ====Test measurement====
 '''
+There was made several measurement on the different wafer in the process. After the predep was the oxide thickness, sheet resistance and slice resistivity measured on some of the wafer.
+{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
+|+ '''Measurement after Predep'''
+|-
+!
+! colspan="2" | Elipsometer
+! colspan="2" | Four Point Probe
+|-
+! width="120" | Wafer #
+! width="120" | Thinkness [nm]
+! width="120" | Refrative index
+! width="120" | Sheet
+! width="120" | Slice
+|-
+! 3
+| 27,4
+| 1,4623
+| 311
+| 17,32
+|-
+! 7
+| 45,27
+| 1,4622
+| 138,5
+| 7,61
+|-
+! 11
+| 61,36
+| 1,4625
+| 16,12
+| 0,859
+|-
+! 15
+| 80,45
+| 1,4624
+| 7,4
+| 0,392
+|-
+! 19
+| 119,37
+| 1,4623
+| 6,6
+| 0,246
+|-
+|}