Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

@@ Line 23: / Line 23: @@
 ====Study setup====
 '''
-There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes.
+There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes so doping from a dummy wafer was minimized.
 {| border="1" cellspacing="1" cellpadding="2" ||3||4||5
@@ Line 38: / Line 38: @@
 |5||1050 <sup>o</sup>C||15 minutes||20 miuntes||17, 18, 19, 20
 |}
+'''
+After the Predep was two wafer from each run taken out to be further processed. The wafers was 1, 2, 5, 6, 9, 10, 13, 14, 17, 18.
+These wafers was dipped in BHF to get the phosphorus glass layer of before the Drive-in process. The Drive-in process was made in Danchip Phosphorus Drive-in furnace (A3). There was a dummy wafer in between the wafers from different temperatures so doping from wafer to wafer was minimized. The Drive-in was done with the process "DRY1050" with is a dry oxidation at 1050 <sup>o</sup>C for 100 minutes and 20 minutes annealing. At the oxdation was the O<sub>2</sub> flow was 5 SLM and N<sub>2</sub> flow for annealing was 3 SLM.