Revision as of 10:47, 25 February 2013

The furnace A4 phosphorus predep(N-predep) can be used to predeposit silicon wafers with phosphor. The silicon wafers are positioned in a quarts boat. Phosphor is predeposited in the silicon wafers.

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Test of Phosphorus Predep furnace

Purpose

To study the coherence between the temperature and time for doping with phosphorus in DTU-Danchip Phosphorus Predep furnace (A4).

Study setup

There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes.

Run #	Temperature	Process time with POCl3	Anneal time N2	Wafer #
1	850 ^oC	15 minutes	20 miuntes	1, 2, 3, 4
2	900 ^oC	15 minutes	20 miuntes	5, 6, 7, 8
3	950 ^oC	15 minutes	20 miuntes	9, 10, 11, 12
4	1000 ^oC	15 minutes	20 miuntes	13, 14, 15, 16
5	1050 ^oC	15 minutes	20 miuntes	17, 18, 19, 20

@@ Line 22: / Line 22: @@
 ====Study setup====
 '''
+There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes.
+{| border="1" cellspacing="1" cellpadding="2" ||3||4||5
+|Run #||Temperature||Process time with POCl3||Anneal time N2||Wafer #
+|-
+|1||850 <sup>o</sup>C||15 minutes||20 miuntes||1, 2, 3, 4
+|-
+|2||900 <sup>o</sup>C||15 minutes||20 miuntes||5, 6, 7, 8
+|-
+|3||950 <sup>o</sup>C||15 minutes||20 miuntes||9, 10, 11, 12
+|-
+|4||1000 <sup>o</sup>C||15 minutes||20 miuntes||13, 14, 15, 16
+|-
+|5||1050 <sup>o</sup>C||15 minutes||20 miuntes||17, 18, 19, 20
+|}