Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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 ====Study setup====
 '''
+There was used 20 boron doped wafers (p-type). There was used four wafer to the five different temperature. There was five dummy wafers on each side of the test wafers. The dummy wafer nearest to the test wafers was changed in between the runes.
+{| border="1" cellspacing="1" cellpadding="2" ||3||4||5
+|Run #||Temperature||Process time with POCl3||Anneal time N2||Wafer #
+|-
+|1||850 <sup>o</sup>C||15 minutes||20 miuntes||1, 2, 3, 4
+|-
+|2||900 <sup>o</sup>C||15 minutes||20 miuntes||5, 6, 7, 8
+|-
+|3||950 <sup>o</sup>C||15 minutes||20 miuntes||9, 10, 11, 12
+|-
+|4||1000 <sup>o</sup>C||15 minutes||20 miuntes||13, 14, 15, 16
+|-
+|5||1050 <sup>o</sup>C||15 minutes||20 miuntes||17, 18, 19, 20
+|}