Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions

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-The etching of silicon releases energy. This means that the faster the etch is, the more heat needs to be dissipated. The consequence is the same if a larger percentage of the wafer is etched. Process A is the fastest etch and as seen above, the exposed area plays an important role. Above 10 % exposed area the oxide mask erodes quickly. If a larger area is to be etched, the cooling must be made more efficient, either by lowering the platen temperature or with increasing the pressure of He on the backside of the wafer. This will be investigated soon.
+The etching of silicon releases energy. This means that the faster the etch is, the more heat needs to be dissipated. The consequence is the same if a larger percentage of the wafer is etched. Process A is the fastest etch and as seen above, the exposed area plays an important role. As the exposed area increases the oxide mask erosion is more and more pronounced.
+If a larger area is to be etched, the cooling must be made more efficient, either by lowering the platen temperature or with increasing the pressure of He on the backside of the wafer. This will be investigated soon.