Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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image:C01548.01-A.jpg|Wafer C01548.01: 5 % exposed area | image:C01548.01-A.jpg|Wafer C01548.01: 5 % exposed area | ||
image:C01548.02-A.jpg|Wafer C01548.02: 10 % exposed area | image:C01548.02-A.jpg|Wafer C01548.02: 10 % exposed area | ||
image:C01548.03-A.jpg|Wafer C01548. | image:C01548.03-A.jpg|Wafer C01548.03: 20 % exposed area | ||
image:C01548.04-A.jpg|Wafer C01548. | image:C01548.04-A.jpg|Wafer C01548.04: 35 % exposed area | ||
image:C01548.05-A.jpg|Wafer C01548. | image:C01548.05-A.jpg|Wafer C01548.05: 50 % exposed area | ||
Without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform. | Without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform. | ||
</gallery> | </gallery> | ||