Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions
New page: TEOS oxide, has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown voltage in the order of 10^6 |
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TEOS oxide, has a dielectric | TEOS oxide, has a dielectric | ||
constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown | constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown | ||
voltage in the order of 10^6 | voltage in the order of <math> 10^6 </math> | ||
for sjov | |||
<math> | |||
\mathcal{V}^\prime=-\sqrt{rcs}A\cosh(\sqrt{rcs}(L-x))-\sqrt{rcs}B\sinh(\sqrt{rcs}(L-x)) | |||
</math> | |||
<math> Z=\frac{\mathcal{V}(0)}{\mathcal{I}(0)}=rL\frac{B\cosh(\sqrt{rcs}L)}{\sqrt{rcs}LB\sinh(\sqrt{rcs}L)} </math> | |||
[[image:RIE1_Si_Angle_O2_CHF3.jpg|300x300px|thumb|right|Angle of sidewall on 1.5 µm trenches - independent on pressure within the given pressure range]] | |||
<math> | |||
\includegraphics[width=0.5\textwidth]{RIE1_Si_Angle_O2_CHF3.jpg} | |||
\caption{The simplified model, which can be used in stead of the | |||
one in figure. In this representation is | |||
the total resistance in the entire transmission lines, not just | |||
between the capacitors.} | |||
</math> | |||