Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
| Line 33: | Line 33: | ||
Can be doped with boron, phosphorus or germanium | Can be doped with boron, phosphorus or germanium | ||
| Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used) | | Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used) | ||
Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used | |||
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|Film thickness | |Film thickness | ||
| | | | ||
*~300nm-4µm | *~300nm - 4µm | ||
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*~40nm - 30µm | *~40nm - 30µm | ||
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*Thin layers (up to 300-400 nm) | *Thin layers (up to 300-400 nm) | ||
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*~10nm - ~1µm(>2h) | |||
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|Process Temperature | |Process Temperature | ||
| Line 51: | Line 53: | ||
*Can be between room temp. and 400 <sup>o</sup>C | *Can be between room temp. and 400 <sup>o</sup>C | ||
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*Expected to be below 100<sup>o</sup>C | |||
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|Step coverage | |Step coverage | ||