Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep'' | *[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep'' | ||
*[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers'' | *[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers'' | ||
*[[/C1 Anneal oxide | *[[/C1 Furnace Anneal-oxide|C1 Furnace Anneal-oxide]] - ''For oxidation and annealing, up to 6" wafer'' | ||
*[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For growing of Gate Oxide on new wafers'' | *[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For growing of Gate Oxide on new wafers'' | ||
*[[/C3 Anneal | *[[/C3 Anneal-bond furnace|C3 Anneal-bond furnace]] - ''For annealing and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|C4 Aluminium Anneal furnace]] - ''For oxidation and annealing of wafers containing Aluminium'' | *[[/C4 Aluminium Anneal furnace|C4 Aluminium Anneal furnace]] - ''For oxidation and annealing of wafers containing Aluminium'' | ||
*[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing and oxidation'' | *[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing and oxidation'' | ||