Specific Process Knowledge/Thermal Process: Difference between revisions
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*[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep'' | *[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep'' | ||
*[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers'' | *[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers'' | ||
*[[/C1 Anneal | *[[/C1 Anneal oxide furnace|C1 Anneal Oxide furnace]] - ''For oxidation and annealing, up to 6" wafer'' | ||
*[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For growing of Gate Oxide on new wafers'' | *[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For growing of Gate Oxide on new wafers'' | ||
*[[/C3 Anneal Bond furnace|C3 Anneal Bond furnace]] - ''For annealing and annealing of bonded wafers'' | *[[/C3 Anneal Bond furnace|C3 Anneal Bond furnace]] - ''For annealing and annealing of bonded wafers'' | ||