Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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*SiO<sub>2</sub> | *SiO<sub>2</sub> | ||
Can be doped with boron | |||
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*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub> | *Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub> | ||
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|Film thickness | |Film thickness | ||
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*~300nm-4µm | |||
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*~40nm - 30µm | *~40nm - 30µm | ||
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|Process Temperature | |Process Temperature | ||
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*700-735 <sup>o</sup>C | *700-735 <sup>o</sup>C | ||
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*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
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|Step coverage | |Step coverage | ||
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* | *Excelent. Very high surface mobility. | ||
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*Less good | *Less good | ||
*When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C | *When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation. | ||
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|- | |- | ||
|Film quality | |Film quality | ||
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* | *Less than thermal oxide. Annealing makes it more dense. | ||
*Few defects | *Few defects | ||
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|Batch size | |Batch size | ||
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*1- | *1-13 4" wafer per run | ||
*deposition on both sides of the substrate | *deposition on both sides of the substrate | ||
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