Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

Revision as of 11:16, 21 November 2007

The ICP-DRIE (Inductively Coupled Plasma - Deep Reactive Ion Etcher) tool at Danchip is manufactured by STS and is called the ASE (Advanced Silicon Etcher). The main purpose of the ASE is etching of silicon using Bosch process.

The Bosch process:

The Bosch process uses alternation between an etch cycle and a passivation cycle. In the case of the silicon etching on the ASE, an etch phase with SF₆ and O₂ alternates with a passivation phase with C₄F₈.

Two recipes have been optimized for the ASE: A shallow etch shallolr and a deep etch deepetch.

Recipe:	Shallolr
SF₆ flow	32 sccm
O₂ flow	8 sccm
Pressure	80 mTorr
RF-power	30 W
Phase	Etch cycle	Passivation cycle

Shallolr

First header

Second header

upper left

right side

lower left

lower middle

%| align="center" width="150px" | File:Wiki.png %| align="center" width="150px" | File:Wiki.png

*A table in a table*
align="center" colspan="2" style="border-top:1px solid red; border-right:1px solid red; border-bottom:2px solid red; border-left:1px solid red;" \| Two Wikimedia logos

@@ Line 46: / Line 46: @@
 | upper left
 | &nbsp;
-| rowspan=2 style="border-bottom:3px solid grey;" valign="top" |
+| rowspan=2 style="border-bottom:3px solid grey;" valign="top" |right side
-right side
 |-
 | style="border-bottom:3px solid grey;" | lower left
@@ Line 56: / Line 55: @@
 |+''A table in a table''
 |-
-| align="center" width="150px" | [[Image:Wiki.png]]
+%| align="center" width="150px" | [[Image:Wiki.png]]
-| align="center" width="150px" | [[Image:Wiki.png]]
+%| align="center" width="150px" | [[Image:Wiki.png]]
 |-
 | align="center" colspan="2" style="border-top:1px solid red; border-right:1px