Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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|style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:WhiteSmoke; color:black"|Oxidation:
*Dry
*Dry
*Wet: with torch (H<math>_2</math>+O<math>_2</math>)
*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)
|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="left"|Performance
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|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*O<math>_2</math>, N<math>_2</math> and H<math>_2</math>
*O<sub>2</sub>, N<sub>2</sub> and H<sub>2</sub>
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates

Revision as of 18:58, 12 October 2012

A3 Furnace Phosphorus drive-in

File:Image.JPG
A3 phosphorus drive-in furnace: positioned in cleanroom 2

A3 Furnace phosphorus drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of phosphor after a pre-deposition. Phospher pre-deposition takes place in the A4 Furnace phosphorus pre-dep. A3 can also be used for drive in of phosphor which has been ion implanted.


A3 is the third furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

Process knowledge


Overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose Drive-in of phosphor, oxidation of silicon and annealing of the oxide. Oxidation:
  • Dry
  • Wet: with torch (H2+O2)
Performance Film thickness
  • Dry SiO2: 50Å to ~2000Å (takes too long to make it thicker)
  • Wet SiO2: 50Å to ~3µm ((takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • O2, N2 and H2
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
  • From A4 furnace directly (e.g. incl. Predep HF)
  • In doubt: look at the cross contamination sheet or ask one from the furnace team
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