Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
| Line 21: | Line 21: | ||
! LPCVD (TEOS) | ! LPCVD (TEOS) | ||
! PECVD | ! PECVD | ||
! Sputter technique | ! Sputter technique (PVD co-sputter/evaporation) | ||
|- | |- | ||
| Stoichiometry | | Stoichiometry | ||
| Line 44: | Line 44: | ||
| | | | ||
*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
| | |||
*Can be between room temp. and 400 <sup>o</sup>C | |||
| | | | ||
|- | |- | ||