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Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions

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==Overview of the performance of LPCVD Silicon Nitride and some process related parameters==
==Overview of the performance of the LPCVD TEOS furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
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!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Deposition of TEOS silicon oxide
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|style="background:WhiteSmoke; color:black"|
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*Deposition of silicon oxide on silicon nitride
Deposition of TEOS - Silicon dioxide based on tetraethoxysilane
*Deposition of silicon oxide on structured surfaces, eg. to cover holes or sealing small cavities.
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Performance
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Film thickness|
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
*0 nm - 2000 nm
*SRN: ~50Å - ~10000Å
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|style="background:LightGrey; color:black"|Step coverage
|style="background:LightGrey; color:black"|Step coverage
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|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
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|style="background:WhiteSmoke; color:black"|
*800-835 <sup>o</sup>C
*725 <sup>o</sup>C
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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|style="background:WhiteSmoke; color:black"|
*80-230 mTorr
*190 mTorr
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|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
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|style="background:WhiteSmoke; color:black"|
*SiH<math>_2</math>Cl<math>_2</math>:10-100 sccm
*TEOS: 50 sccm
*NH<math>_3</math>:10-75 sccm
*O<math>_2</math>: 30 sccm
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
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| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
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|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*Silicon wafers (only clean wafers)
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
**from furnaces in stack A or B in cleanroom 2
*Quartz wafers (RCA cleaned)
*Quartz wafers (RCA cleaned)
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