Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

@@ Line 124: / Line 124: @@
 |.
 |~17%
+|}
+=Recipes on PECVD3 for deposition of doped oxide=
+===Recipes===
+{| border="1" cellspacing="0" cellpadding="7"
+|-
+|Recipe name
+|SiH<math>_4</math> flow [sccm]
+|N<math>_2</math> flow [sccm]
+|GeH<math>_4</math> flow [sccm] (scaled by 100)
+|B<math>_2</math>H<math>_6</math> flow [sccm]
+|PH<math>_3</math> flow [sccm]
+|Pressure [mTorr]
+|Power [W]
+|Description
+|-
+|Core-Ge
+|17
+|300
+|300
+|0
+|0
+|400
+|300 LF
+|Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
+|-
+|Top-BPSG
+|17
+|0
+|0
+|40
+|100
+|500
+|800 LF
+|Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
+|}
+===Expected results===
+{| border="1" cellspacing="0" cellpadding="5"
+|-
+|Recipe name
+|Deposition rate [nm/min]
+|Refractive index
+|-
+|Core-Ge
+|
+|
+|-
+|Top-BPSG
+|~248 nm/min
+|~1.458
 |}