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=Aligner: MA6-2=
=Aligner: MA6-2=
[[Image:AlignerMA6-2 in E-4.jpg|400px|thumb|The Aligner: MA6-2 is located in E-4.]]
[[File:AlignerMA6-2 in E-4.jpg|400px|thumb|The Aligner: MA6-2 is located in E-4.]]


The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography.  
'''Tool description'''<br>
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied.  
The Aligner: MA6-2 is a manual UV exposure system, which can be used for mask alignment and exposure of UV resists on chips, 50 mm, 100 mm, and 150 mm substrates.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.
 
The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.


The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.
The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.


{| class="wikitable"
! style="text-align:left" | Product:
| style="padding-left: 10px" | Süss mask aligner MA6
|-
! style="text-align:left" | Year of purchase:   
| style="padding-left: 10px" | 2014
|-
! style="text-align:left" | Location:
| style="padding-left: 10px" | Cleanroom E-4
|}


'''Training videos:'''
'''User manual'''<br>
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager] - '''requires login'''


[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]
'''Tool training'''<br>
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by the online tool training and a hands-on authorization training.<br>
The tool training videos are part of the online tool training, but can also be viewed [https://www.youtube.com/watch?v=o8IBtfQHNzU here (Operation)] and [https://www.youtube.com/watch?v=rvUuXYgw-xU here (Alignment)].
<br clear="all" />


[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]
=Equipment performance and process related parameters=
{| class="wikitable"
|-
! scope=row style="text-align: left;" | Purpose
|
*Mask alignment and UV exposure
*Bond alignment
|-
! scope=row style="text-align: left;" | Exposure modes
|
*Vacuum contact
*Hard contact
*Soft contact
*Proximity
*Flood exposure
|-
! scope=row style="text-align: left;" | Exposure light/filters
|
*365 nm (i-line)
*broadband (i-, g-, h-lines), requires tool change
*280-350 nm (UV300), requires tool change
|-
! scope=row style="text-align: left;" | Minimum resolution
| ~1.25 µm
|-
! scope=row style="text-align: left;" | Mask size
|
*5x5 inches
*7x7 inches
*Special holder for 4x2" designs on 5x5 inch
|-
! scope=row style="text-align: left;" | Alignment modes
|
*Top side (TSA): ±1 µm (tool spec: ±2 µm)
*Back side (BSA): ±2 µm (tool spec: ±5 µm)
|-
! scope=row style="text-align: left;" | Substrate size
|
*Small pieces: 1x1 cm
*50 mm wafers
*100 mm wafers
*150 mm wafers
|-
! scope=row style="text-align: left;" | Allowed materials
|
*All cleanroom allowed materials, except copper and steel
*III-V materials only allowed on dedicated chuck
|-
! scope=row style="text-align: left;" | Substrate batch
| 1
|}


 
=Process information=
The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager] - '''requires login'''
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.  


==Exposure dose==
==Exposure dose==
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-2|Information on UV exposure dose]]
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-2|Information on UV exposure dose]]


==Process information==
==Alignment mark design and locations==
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.  
[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|Alignment mark design and locations]].
 
==Light intensity and uniformity after lamp ignition==
[[image:MA6-2_light_intensity_and_uniformity_from_ignition.png|400px|right|thumb|Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.]]


Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design and locations]].
The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.  


===Quality Control (QC)===
If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: MA6-2'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=339 The QC procedure for Aligner: MA6-2] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=339 The newest QC data for Aligner: MA6-2] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"


! QC Recipe:
The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.
! Manual intensity measurement
<br clear="all" />
|-  
|Measurement area
|100 mm
|-
|Number of measurements
|5
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: MA6-2
|-
|Nominal intensity
|11 mW/cm<sup>2</sup> @ 365 nm
|-
|Intensity deviation from nominal
|≤5%
|-
|Intensity non-uniformity
|≤2%
|-
|}
|-
|}
Power supply and/or lamp will be adjusted if intensity is outside the limit.
|}


==Alignment==
==Alignment==
Line 101: Line 133:
**High: 450µm x 650µm (950µm x 650µm full field)
**High: 450µm x 650µm (950µm x 650µm full field)


==Light intensity and uniformity after lamp ignition==
==Quality Control (QC)==
 
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
[[image:MA6-2_light_intensity_and_uniformity_from_ignition.png|400px|right|thumb|Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.]]
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: MA6-2'''
 
The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.
 
If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.
 
The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.
<br clear="all" />
 
==Equipment performance and process related parameters==
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Mask alignment and UV exposure, potentially DUV exposure <sup>1)</sup>
 
Bond alignment
|-
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=339 The QC procedure for Aligner: MA6-2] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=339 The newest QC data for Aligner: MA6-2] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"


!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
! QC Recipe:
 
! Manual intensity measurement
|style="background:LightGrey; color:black"|Exposure mode
|-
|style="background:WhiteSmoke; color:black" colspan="2"|
|Measurement area
vacuum contact, hard contact, soft contact, proximity, flood exposure
|100 mm
|-
|Number of measurements
|5
|-
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|}
|style="background:WhiteSmoke; color:black" colspan="2"|
| align="center" valign="top"|
*broadband (i-, g-, h-line)
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
*365 nm (i-line)
!QC limits
*"UV300" (280-350 nm)
!Aligner: MA6-2
*DUV (240 nm) <sup>1)</sup>
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|Nominal intensity
|style="background:WhiteSmoke; color:black" colspan="2"|
|11 mW/cm<sup>2</sup> @ 365 nm
Typically 1.25 µm, possibly down to 0.8 µm <sup>1)</sup>
|-
|-
|style="background:LightGrey; color:black"|Mask size
|Intensity deviation from nominal
|style="background:WhiteSmoke; color:black" colspan="2"|
|≤5%
*5x5 inch
*7x7 inch
*special holder for 4 x 2" designs on 5x5 inch
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
|Intensity non-uniformity
|style="background:WhiteSmoke; color:black" colspan="2"|
|≤2%
*Top side (TSA), ±1µm (machine spec: ±2µm)
*Backside (BSA), ±2µm (machine spec: ±5µm)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|}
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* small pieces 1x1cm
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials except copper and steel
Dedicated chuck for III-V materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1
|-
|}
|}
 
Power supply and/or lamp will be adjusted if intensity is outside the limit.
<sup>1)</sup> Not available. Requires tool change. Would require safety investigation (and a dedicated project) to become available.
|}
<br clear="all" />
<br clear="all" />

Revision as of 15:32, 25 June 2026

Aligner: MA6-2

The Aligner: MA6-2 is located in E-4.

Tool description
The Aligner: MA6-2 is a manual UV exposure system, which can be used for mask alignment and exposure of UV resists on chips, 50 mm, 100 mm, and 150 mm substrates.

The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.

The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.

Product: Süss mask aligner MA6
Year of purchase: 2014
Location: Cleanroom E-4

User manual
The user manual and contact information can be found in LabManager - requires login

Tool training
Training on the tool requires users to complete the lithography TPT followed by the online tool training and a hands-on authorization training.
The tool training videos are part of the online tool training, but can also be viewed here (Operation) and here (Alignment).

Equipment performance and process related parameters

Purpose
  • Mask alignment and UV exposure
  • Bond alignment
Exposure modes
  • Vacuum contact
  • Hard contact
  • Soft contact
  • Proximity
  • Flood exposure
Exposure light/filters
  • 365 nm (i-line)
  • broadband (i-, g-, h-lines), requires tool change
  • 280-350 nm (UV300), requires tool change
Minimum resolution ~1.25 µm
Mask size
  • 5x5 inches
  • 7x7 inches
  • Special holder for 4x2" designs on 5x5 inch
Alignment modes
  • Top side (TSA): ±1 µm (tool spec: ±2 µm)
  • Back side (BSA): ±2 µm (tool spec: ±5 µm)
Substrate size
  • Small pieces: 1x1 cm
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials
  • All cleanroom allowed materials, except copper and steel
  • III-V materials only allowed on dedicated chuck
Substrate batch 1

Process information

The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.

Exposure dose

Information on UV exposure dose

Alignment mark design and locations

Alignment mark design and locations.

Light intensity and uniformity after lamp ignition

Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.

The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.

If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.

The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.

Alignment

Top Side Alignment:

  • TSA microscope standard objectives: 5X, and 10X (20X available)
  • TSA microscope special objectives: 11.25X offset (for smaller separation)
  • Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
    • Alignment of smaller separations is possible using the "scan microscope" function
  • Maximum distance between TSA microscope objectives: 160 mm
  • TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)

BackSide Alignment:

  • Minimum distance between BSA microscope objectives: 15 mm
  • Maximum distance between BSA microscope objectives: 100 mm
  • BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
  • BSA chuck view ranges:
    • 2": X +/- 8-22mm; Y +/- 0-6mm
    • 4": X +/- 14-46mm; Y +/- 0-10mm
    • 6": X +/- 14-69mm; Y +/- 0-10mm (OBS: Max. separation of BSA microscopes is 100mm)


Microscope field of view (W x H, splitfield):

  • TSA 5X
    • Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
    • Camera: 350µm x 500µm (700µm x 500µm full field)
  • TSA 10X
    • Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
    • Camera: 150µm x 250µm (350µm x 250µm full field)
  • TSA special
    • Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
    • Camera: 150µm x 200µm (300µm x 200µm full field)
  • BSA camera
    • Low: 1.5mm x 2mm (3mm x 2mm full field)
    • High: 450µm x 650µm (950µm x 650µm full field)

Quality Control (QC)

Quality Control (QC) for Aligner: MA6-2
QC Recipe: Manual intensity measurement
Measurement area 100 mm
Number of measurements 5
QC limits Aligner: MA6-2
Nominal intensity 11 mW/cm2 @ 365 nm
Intensity deviation from nominal ≤5%
Intensity non-uniformity ≤2%

Power supply and/or lamp will be adjusted if intensity is outside the limit.


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