Specific Process Knowledge/Lithography/Descum

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Descum Comparison Table

	Plasma Asher 3: Descum	Plasma Asher 4 (Clean)	Plasma Asher 5 (Dirty)
Purpose	Resist descum	Resist stripping Resist descum	Resist stripping Resist descum
Method	Plasma ashing	Plasma ashing	Plasma ashing
Process gasses	O2 (50 sccm)	O2 (0-500 sccm) N2 (0-500 sccm)	O2 (0-500 sccm) N2 (0-500 sccm) CF4 (0-200 sccm)
Process power	10-100 W (10-100%)	150-1000 W	150-1000 W
Substrate batch	Chips: several 50 mm wafer: several 100 mm wafer: 1	Chips: several 50 mm wafer: several 100 mm wafer: 1-25 150 mm wafer: 1-25 200 mm wafer: 1-25	Chips: several 50 mm wafer: several 100 mm wafer: 1-25 150 mm wafer: 1-25 200 mm wafer: 1-25
Substrate materials	No polymer substrates Silicon substrates III-V substrates Glass substrates Films, or patterned films, of any material except type IV (Pb, Te)	No metals No metal oxides No III-V materials Silicon substrates Glass substrates Polymer substrates Films, or patterned films, of resists/polymers	Silicon substrates III-V substrates Glass substrates Polymer substrates Films, or patterned films, of any material except type IV (Pb, Te)

Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.