Specific Process Knowledge/Lithography/Development/UV developer: Difference between revisions
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*AZ 726 MIF (TMAH): 230 ml/min | *AZ 726 MIF (TMAH): 230 ml/min | ||
* | *Topside rinse DI water: 400 ml/min (with BSR+CR active) | ||
*Backside rinse DI water: 55 ml/min (with TSR+CR active) | *Backside rinse DI water: 55 ml/min (with TSR+CR active) | ||
*Process Nitrogen: 50 l/min | *Process Nitrogen: 50 l/min | ||
Revision as of 14:28, 11 March 2026
The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.
Developer TMAH UV-lithography
Developer TMAH UV-lithography was released Q4 2014.
Link to information about developer chuck size and hotplate pin positions.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
| Purpose |
Development of
| |
|---|---|---|
| Developer |
AZ 726 MIF (2.38% TMAH in water) | |
| Method | Development |
Puddle |
| Handling |
Vacuum chuck | |
| Process parameters | Temperature |
Room temperature |
| Agitation |
Rotation | |
| Rinse |
DI water | |
| Substrates | Substrate size |
|
| Allowed materials |
Silicon and glass substrates Film or pattern of all except Type IV | |
| Batch |
1-25 | |
| Media flow rates |
|