Specific Process Knowledge/Thermal Process: Difference between revisions

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*[[/C3 Furnace Anneal Bond|C3 Furnace Anneal Bond]] - ''For annealing and annealing of bonded wafers''
*[[/C3 Furnace Anneal Bond|C3 Furnace Anneal Bond]] - ''For annealing and annealing of bonded wafers''
*[[/C4 Furnace Aluminium Anneal|C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium''
*[[/C4 Furnace Aluminium Anneal|C4 Furnace Aluminium Anneal]] - ''For oxidation and annealing of wafers containing Aluminium''
*[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing''
*[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing and oxidation''
*[[/Furnace APOX|Furnace APOX]] - ''Furnace for growing very thick oxide''
*[[/Furnace APOX|Furnace APOX]] - ''Furnace for growing very thick oxide''
*[[/Jipelec RTP|Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material''
*[[/Jipelec RTP|Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material''

Revision as of 09:47, 7 July 2011

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