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| [[Specific Process Knowledge/Etch/DRIE-Pegasus/SOIetch|SOI etch: Recipe, specifications and results]] | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/SOIetch|SOI etch: Recipe, specifications and results]] |
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| {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
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| |+ '''Process B specifications'''
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| |-
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| ! Parameter
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| ! Specification
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| ! Average result
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| |-
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| ! Etch rate (µm/min)
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| | > 10
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| | 10.7
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| |-
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| ! Etched depth (µm)
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| | 100
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| | 107
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| |-
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| ! Scallop size (nm)
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| | < 800
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| | 685
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| |-
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| ! Profile (degs)
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| | 91 +/- 1
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| | 90.7
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| |-
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| ! Selectivity to AZ photoresist
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| | > 100
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| | 183
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| |-
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| ! Undercut (µm)
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| | <1.5
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| | 0.89
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| |-
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| ! Uniformity (%)
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| | < 3.5
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| | 2.7
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| |-
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| ! Repeatability (%)
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| | <4
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| | 0.47
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| |-
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| |}
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| {| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
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| |+ '''Process B recipe'''
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| |-
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| |-
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| ! width="120" | Main etch (D->E)
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| ! width="120" | Etch
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| ! width="120" | Dep
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| |-
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| ! Gas flow (sccm)
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| | SF<sub>6</sub> 350 O<sub>2</sub> 35
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| | C<sub>4</sub>F<sub>8</sub> 200
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| |-
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| ! Cycle time (secs)
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| | 7.0
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| | 4.0
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| |-
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| ! Pressure (mtorr)
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| | 20 (1.5 s) 100
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| | 25
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| |-
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| ! Coil power (W)
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| | 2800
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| | 2000
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| |-
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| ! Platen power (W)
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| | 130 (1.5) 40
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| | 0
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| |-
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| ! Cycles
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| | colspan="2" | 55 (process time 10:05)
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| |-
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| ! Common
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| | colspan="2" | Temperature 10 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
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| |}
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| == Nanoetching == | | == Nanoetching == |
