Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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=== Process C === | === Process C === | ||
Process A is labelled '' | Process A is labelled ''Nano silicon etch''. In the acceptance test the process was run on a 100 mm Danchip wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %. | ||
[[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C: Recipe, specifications and results]] | [[Specific Process Knowledge/Etch/DRIE-Pegasus/processC|Process C: Recipe, specifications and results]] | ||