Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions
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*Phosphorus doping/pre-deposition using POCl<sub>3</sub> | *Phosphorus doping/pre-deposition using POCl<sub>3</sub> | ||
*Dry oxidation using O<sub>2</sub>. 0-300 nm Si<sub>2</sub> | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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*1 atm (atmospheric pressure) | *1 atm (atmospheric pressure) | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Gases on the system | ||
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*POCl<sub>3</sub> | *POCl<sub>3</sub> | ||
*O<sub>2</sub> | |||
*N<sub>2</sub> | *N<sub>2</sub> | ||
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