Specific Process Knowledge/Thin film deposition: Difference between revisions
| Line 83: | Line 83: | ||
[[/Deposition of NiV|NiV]] alloy <br/> | [[/Deposition of NiV|NiV]] alloy <br/> | ||
[[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/> | [[/Deposition of TiW|TiW]] alloy (10%/90% by weight) <br/> | ||
[[/Deposition of MoSi|MoSi]] alloy (50%/50% by At.%) <br/> | |||
And an electroceramic: | And an electroceramic: | ||
Revision as of 21:27, 16 July 2025
The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.
Feedback to this page: click here
Choose material to deposit
| Semiconductors | Oxides | Nitrides | Carbon and Carbides | Metals | Alloys | Transparent conductive oxides | Polymers | Multilayers |
|
Aluminium Oxide (Al2O3)
|
Silicon Nitride - and oxynitride
|
Carbon
|
Aluminium
|
AlCu And an electroceramic: YSZ (Yttrium stabilized zirconia) |
ITO (Tin doped Indium Oxide) |
SU-8 |
Oh no! My material is not on the list! Please contact the Thin Film group if you would like to inquire about a material that is not mentioned here.
Choose deposition equipment
| PVD - Physical vapor deposition | LPCVD - low pressure chemical vapor deposition | PECVD - plasma enhanced chemical vapor deposition | ALD - atomic layer deposition | Coaters - for polymers | Others
|
|
|
|
|
See the Lithography/Coaters page for coating polymers |
|